Free-pyro black LiNbO3 and LiTaO3 wafers were prepared by chemical reduction. Surface acoustic wave(SAW) devices were fabricated on these black wafers. Performance of SAW devices showed that pyroelelctric charges were reduced due to the higher conductivity of black wafers and near-ultraviolet light absorption was increased. Therefore, the final test yield of SAW devices was increased 5-10%.
1 ) High ability of electrical charges neutralization. Black-LT and Black-LN wafers shall neutraliza the electrical charges instantaneously even if any electrical potential occur rapidly and slightly.
2 ) Black- LT and Black- LN shall have no difference at piezoelectric properties from usual LT and LN wafers.
3 ) High uniformity of Bulk resistivity throughout the surface and depth of wafers.
4 ) Bulk resistivity shall be voluntarily controllable at each lever(1.0E+10—9.0E+11Ω *cm)
Orientation | Diameter(mm) | Thickness(mm) | Surface Finish |
36°Y-cut 42°Y-cut 48°Y-cut X-112°Y-cut | 76.2 100.0 150.0 | 0.35 0.50 1.00 | Single Side Polished(SSP) Double Sides Polished(DSP) |
Orientation | Diameter(mm) | Thickness(mm) | Surface Finish |
YZ-cut 41°Y-cut 64°Y-cut 127.86°Y-cut | 76.2 100.0 150.0 | 0.35 0.50 1.00 | Single Side Polished(SSP) Double Sides Polished(DSP) |
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